Samsung launches 3nm chips based on (GAA) transistor architecture

Samsung has officially launched the world’s most futuristic chips that are manufactured using the top-class 3nm process technology. On July 25, the company held a 3nm chip shipment ceremony using next-generation transistor GAA (Gate All Around) tech at Hwaseong Campus, Gyeonggi-do foundry.

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According to the information shared by Samsung, around 100 people attended the event including the Minister of Trade, Industry, and Energy Changyang Lee, Samsung DS division head, Kye Kyung-hyeon (CEO), and executives and employees who participated in the 3nm GAA R&D and mass production.

At the ceremony, the Samsung foundry division expressed its ambition to strengthen its business competitiveness through 3nm GAA process chips mass production. Samsung foundry official – Jeong Ki-tae, said that collaboration beyond business divisions surpassed the limits of developments in technology.

Samsung’s DS division head Kye-hyung said: “Samsung Electronics has marked a milestone in the foundry business with this product mass production, encouraging employees and saying. Early development of GAA technology, which will be a new alternative when FinFET transistors reach their technological limits. It is an innovative result of creating something from nothing.”

Samsung and GAA transistors

Way back in the early 2000s, Samsung Electronics had begun its research on the structure of GAA transistors and later on applied the 3nm process around 5 years back. Moving ahead, the company announced the world’s first mass production of the 3nm process with GAA technology last month.

It’s worth mentioning that Samsung applied the 3-nm GAA process to high-performance computing (HPC) for the first time and is working with major customers to expand its application to various product groups including mobile SoC products. Starting Hwaseong campus, Samsung plans to expand it to the Pyeongtaek campus in the future.

(via)