Key Points:
- AMD may adopt Samsung’s 3nm GAA technology for its future chips.
- GAA technology offers the potential for faster and more power-efficient chips.
- Collaboration with AMD could significantly bolster Samsung’s semiconductor reputation.
AMD is reportedly considering Samsung Foundry’s 3nm Gate All Around (GAA) process for its upcoming chips, a move that could mark a significant endorsement of Samsung’s advanced semiconductor technology. Despite launching its 3nm chips in late 2022, Samsung has struggled to attract major clients, sparking rumors about the viability of its technology. However, AMD’s potential adoption signals a promising shift.
AMD’s CEO, Lisa Su, suggested during her keynote at the ITF World 2024 expo that the company might leverage the GAA architecture for its 3nm chips. This choice is particularly noteworthy because TSMC, AMD’s primary competitor, has not implemented GAA technology in its 3nm nodes.
Samsung’s second-generation 3nm process, known as SF3 or 3GAP, offers enhanced current drive and reduced power leakage compared to traditional FinFET technology. These improvements could translate into faster, more efficient chips, though real-world performance remains to be seen.
This potential partnership could significantly boost Samsung’s standing in the semiconductor industry, encouraging other major clients, such as Qualcomm, to consider Samsung’s 3nm process. Additionally, Samsung already collaborates with AMD by supplying HBM3 memory chips for AI accelerators and utilizing AMD’s RDNA architecture for its Xclipse GPUs in mobile devices. Strengthening this relationship with a new 3nm collaboration could help Samsung close the gap with its rival TSMC, enhancing its market position and technological credibility.
