Samsung Electronics today announced the successful development of its first DDR5 DRAM with 12nm process technology which will offer strong performance and high energy efficiency. Notably, the Korean tech giant is a world leader in-memory technology.
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Jooyoung Lee, Executive Vice President of DRAM Products & Technology at Samsung Electronics says that the 12nm DRAM can play a key role in bringing DDR5 DRAM to market which will be the basis for more sustainable operations in next-generation computing, data centers, and AI-driven systems.
Going by the information, the new DRAM has the highest memory chip density which can increase wafer productivity by 20%. Additionally, the 12nm process technological bound was made possible by the use of a new high-κ material that increases cell capacity.
The new Samsung DDR5 DRAM with the 12nm process technology enables speeds of up to 7.2 gigabits per second, equivalent to processing two 30 gigabytes (GB) of UHD movies in just one second. However, the proprietary design technology improves critical circuit characteristics which are combined with advanced multi-layer ultraviolet (EUV) lithography.
Moving on, with the start of mass production in 2023, Samsung aims to expand its 12nm DRAM technology to various markets. Furthermore, the company has also planned to continue working with industry partners to support the rapid expansion of next-generation computing.
Joe Macri, senior VP, corporate fellow, and client, compute and graphics CTO at AMD said
- Innovation requires close collaboration with industry partners to continue pushing the boundaries of technology.
- We are excited to once again be working with Samsung on this topic. This is especially true with the introduction of DDR5 memory products optimized and validated for Zen platforms.
