In a recent development, Choi Jinseog, who was imprisoned over industrial espionage charges wrote a letter to Reuters, defending himself from the allegations of building a Samsung semiconductor replica in China.
According to the info, Choi Jinseog elaborated on his defense plan and said the allegations against him regarding the Xian plant were not substantiated. During the case hearings, he denied all the charges through his lawyer.
Earlier this month, prosecutors indicted Choi for illegally obtaining Samsung factory’s secret information to build a semiconductor plant only 1.5 km (1 mile) from a Samsung factory in Xian, China.
In the letter, Choi said the factory was planned for Taiwan’s Foxconn, for early test production of DRAM memory chips, while Samsung’s plant in Xian was designed to manufacture NAND flash memory chips.
Choi said DRAM process technology is more than 30% different from making NAND flash chips because it is more complicated, and some equipment used in manufacturing both chips is also different.
“They use different equipment and the layout of (Samsung’s) NAND flash chip equipment is really of no use for us,” Choi said in the letter.
Samsung declined to comment, citing the ongoing investigations. [Via Reuters]
“We abide by laws and regulations governing jurisdictions we operate in,” Foxconn said.
As reported earlier by Reuters, prosecutors allege Choi planned to build a DRAM factory in Xian for Foxconn and illegally used secret data his company’s employees obtained from workers of two Samsung contractors.
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