Key Points:
- AMD is considering Samsung’s 3nm GAA process for its next-gen products.
- This move could significantly bolster Samsung Foundry’s position against TSMC.
- Samsung’s adoption of GAA technology at the 3nm node offers superior data processing speed and power efficiency.
At the recent ITF World 2024 event, AMD CEO Lisa Su hinted at the possibility of utilizing Samsung Foundry’s cutting-edge 3nm GAA (Gate-All-Around) process for their forthcoming products. This strategic consideration could dramatically enhance Samsung’s competitive stance against industry leader TSMC.
According to Business Korea, Samsung is poised to deepen its collaboration with AMD, a partnership that could redefine dynamics in the semiconductor foundry market. AMD’s announcement of plans to mass-produce using Samsung’s 3nm GAA technology underscores a pivotal shift. This technology, exclusive to Samsung at this process node, promises notable improvements in data processing speed and power efficiency over the traditional FinFET technology.
Samsung’s leadership in GAA technology began in 2022 when it became the first foundry to mass-produce using the 3nm process. Despite early challenges with yield and power efficiency impacting its initial sales, securing orders from a significant player like AMD could mark a turning point.
An industry insider highlighted the potential impact of this collaboration, noting, “For Samsung, the partnership with AMD represents a critical opportunity to challenge TSMC’s dominance in the foundry sector.” As AMD leverages its expertise in CPUs and GPUs, this partnership is also expected to advance developments in AI semiconductors, solidifying a robust alliance between the two tech giants.
